There are still lots of open positions. Let's find the one that's right for you.
The Assistant Materials Scientist will contribute to the Nanoscale Magnetic and Electronic Heterostructure Group at Argonne National Laboratory, focusing on understanding the behavior of novel materials for ultra-dense, fast synaptic memory applications. The role involves conducting advanced experimental research using in-situ transmission electron microscopy (TEM) methods to explore the physics of spin and charge-based memory materials, particularly in the context of microelectronics. The position requires collaboration with a diverse team of scientists to tackle complex challenges in the field.