Assistant Materials Scientist - MSD Nanoscale Magnetic & Electronic Heterostructures Group

About the position

The Assistant Materials Scientist will contribute to the Nanoscale Magnetic and Electronic Heterostructure Group at Argonne National Laboratory, focusing on understanding the behavior of novel materials for ultra-dense, fast synaptic memory applications. The role involves conducting advanced experimental research using in-situ transmission electron microscopy (TEM) methods to explore the physics of spin and charge-based memory materials, particularly in the context of microelectronics. The position requires collaboration with a diverse team of scientists to tackle complex challenges in the field.

Responsibilities

• Conduct experimental laboratory work using advanced characterization techniques such as TEM (4D-STEM, HR-TEM, compositional mapping).
• Perform transport property measurements using a probe station.
• Collaborate effectively in a highly interdisciplinary environment with materials scientists, physicists, and chemists.
• Explore time-resolved imaging of material behavior using ultrafast electron microscopy techniques.

Requirements

• Ph.D. in Materials Science, Physics, or a related discipline with 1-3+ years of experience.
• Strong experimental and theoretical background in in-situ electrical transport measurements applied to nanostructures.
• Experience with thin film deposition, nanofabrication, and patterning of devices.
• Knowledge in thin film and nanostructure synthesis and lithographic patterning.
• Ability to model Argonne's core values of impact, safety, respect, integrity, and teamwork.

Nice-to-haves

• Expertise in materials and phenomena relevant to microelectronics.
• Experience in advanced ultrafast electron microscopy techniques.

Benefits

• Full-time position with competitive salary.
• Opportunities for professional development and collaboration in a diverse research environment.