Process Integration Engineer - Advanced DRAM

Micron Technology - Boise, ID

Full-time - Mid Level

Boise, ID

Computer and Electronic Product Manufacturing

About the position

As a Process Integration Engineer in the 3D DRAM organization at Micron Technology, you will be part of a team of world-class engineers working in an industry-leading 300mm R&D facility. Your primary focus will be on the performance and manufacturability of Micron's cutting-edge next-generation memories. This role is critical in enabling the future of memory scaling, specifically in the integration and circuit development related to 3D DRAM technology. You will leverage your broad knowledge of process integration, materials science, and semiconductor device physics to drive innovation and solve complex challenges in memory technology. In this position, you will lead technology development activities aimed at enabling the first 3D DRAM. This includes working on device components such as charge storage devices and thin-film transistors. You will be responsible for optimizing process flows and developing creative solutions to meet product requirements. Your role will require significant interaction with various cross-functional teams, including process development, product engineering, design, probe, and yield enhancement, to address performance and yield issues effectively. You will design and run experiments in the R&D fab, analyze inline, parametric, and probe data to evaluate operating and failure mechanisms, and apply fundamental principles for optimizing device performance and reliability. Additionally, you will summarize complex problems, articulate the necessary actions to resolve them, and lead the team in implementing these solutions. This position demands a meticulous approach to experiment design and data analysis, along with proven project management skills to drive cross-functional technical teams toward success.

Responsibilities

• Lead technology development activities to enable the first 3D DRAM, working on device components such as charge storage devices and thin-film transistors.
• Optimize process flows and develop creative solutions to meet product requirements.
• Engage numerous cross-functional teams including process development, product engineering, design, probe, and yield enhancement to arrive at solutions for performance and yield issues.
• Design and run experiments in the R&D fab.
• Analyze inline, parametric, and probe data to evaluate operating and failure mechanisms, sources of noise and variability, and to apply fundamental principles for optimization of device performance and reliability.
• Summarize sophisticated problems, explain the actions necessary to address them, and drive the team to implement them.

Requirements

• MS or PhD in Physics, Materials Science & Engineering, Electrical Engineering, or similar technical field.
• 5+ years of relevant industry experience.
• Detailed knowledge of mainstream memory technologies such as DRAM, NAND, etc. acquired through significant proven contributions.
• Strong understanding of semiconductor process integration and process development.
• Strong functional knowledge of materials science and semiconductor device physics.
• Meticulous experiment design and data analysis, including theoretical & statistical applications.
• Proven project management skills and experience driving cross-functional technical teams.
• Understanding the challenges and opportunities facing alternative memory technologies is encouraged.

Benefits

• Choice of medical, dental and vision plans to meet family healthcare needs and budget.
• Benefit programs that help protect income if unable to work due to illness or injury.
• Paid family leave.
• Robust paid time-off program and paid holidays.