Sr Device & Process Engineer of GaN
Renesas Electronics•San Jose, CA
459d
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About The Position
The position is for an experienced researcher specializing in compound semiconductors, particularly focusing on the development of innovative epitaxy designs for GaN on Silicon process technology. The role aims to achieve superior linearity and power added efficiency in HEMT devices for power amplifier design. The researcher will collaborate with foundry and academic partners, utilize TCAD tools for process flow development, and oversee the design and testing of structures to ensure performance improvements. Additionally, the candidate will be responsible for model development and collaboration with the design team to finalize product designs.
