Sr Device & Process Engineer of GaN

Renesas Electronics - San Jose, CA

Full-time

San Jose, CA

Computer and Electronic Product Manufacturing

About the position

The position is for an experienced researcher specializing in compound semiconductors, particularly focusing on the development of innovative epitaxy designs for GaN on Silicon process technology. The role aims to achieve superior linearity and power added efficiency in HEMT devices for power amplifier design. The researcher will collaborate with foundry and academic partners, utilize TCAD tools for process flow development, and oversee the design and testing of structures to ensure performance improvements. Additionally, the candidate will be responsible for model development and collaboration with the design team to finalize product designs.

Responsibilities

• Conduct literature searches focusing on GaN devices on Silicon.
• Perform TCAD simulations using Sentaurus tool to design GaN epitaxy experiments.
• Design and layout test structures and manage test chip tapeout.
• Characterize devices using DC, CV, and RF characterization techniques.
• Conduct CW and pulsed IV, S-parameter, and Load-Pull measurements.
• Perform device-level circuit simulations using Cadence and ADS tools.
• Develop compact models using CMC standard model for GaN devices.

Requirements

• MS or PhD in Electrical Engineering, Physics, or Material Science with a research focus on GaN epitaxy, GaN HEMT, or GaAs pHEMT/HBT.
• Good understanding of high band gap GaN or GaAs device physics and fabrication processes.
• Knowledge of device reliability issues in III-V devices.
• Familiarity with GaN or GaAs epitaxy growth processes.
• Experience with TCAD simulation of high band gap GaN or GaAs devices.
• Proficiency in measurement techniques such as DC and pulsed IV, CV, CW and pulsed S-parameter, and load-pull characterization.
• Strong written and oral communication skills, along with project management capabilities.